Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS' (1996)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; CIRCUITOS ELETRÔNICOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Crystal Growth
- Volume/Número/Paginação/Ano: v.169, p.424-8, 1996
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ABNT
GONZÁLEZ-BORRERO, P P et al. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, v. 169, p. 424-8, 1996Tradução . . Acesso em: 09 maio 2024. -
APA
González-Borrero, P. P., Lubyshev, D. I., Marega Júnior, E., Petitprez, E., & Basmaji, P. (1996). Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, 169, 424-8. -
NLM
González-Borrero PP, Lubyshev DI, Marega Júnior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2024 maio 09 ] -
Vancouver
González-Borrero PP, Lubyshev DI, Marega Júnior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2024 maio 09 ] - Surface kinetics effects at the mbe growth of iii-v compounds
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Projeto e construcao de um sistema de vacuo para uso em espectroscopia de massa de particulas ionizadas (sims)
- Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates
- Caracterização de nanoestruturas semicondutoras através de Técnica de Microscopia por Força Atômica (AFM)
- Análise do perfil gerado por ataque químico úmido em filme de GaAs, crescido sobre várias orientações
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates
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