Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations (1997)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher place: Águas de Lindóia
- Date published: 1997
- Source:
- Título do periódico: Program and Abstracts
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
GONZÁLEZ-BORRERO, P P et al. Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 28 mar. 2024. -
APA
González-Borrero, P. P., Petitprez, E., Lubyshev, D. I., Marega Júnior, E., & Basmaji, P. (1997). Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
González-Borrero PP, Petitprez E, Lubyshev DI, Marega Júnior E, Basmaji P. Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. Program and Abstracts. 1997 ;[citado 2024 mar. 28 ] -
Vancouver
González-Borrero PP, Petitprez E, Lubyshev DI, Marega Júnior E, Basmaji P. Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. Program and Abstracts. 1997 ;[citado 2024 mar. 28 ] - Surface kinetics effects at the mbe growth of iii-v compounds
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