Electric field induce delocalization in an aperiodic semiconductor heterostructure (1997)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher place: Águas de Lindóia
- Date published: 1997
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
BOSQUETTI, D et al. Electric field induce delocalization in an aperiodic semiconductor heterostructure. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 18 abr. 2024. -
APA
Bosquetti, D., Basmaji, P., Hipólito, O., & Marega Júnior, E. (1997). Electric field induce delocalization in an aperiodic semiconductor heterostructure. In . Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Bosquetti D, Basmaji P, Hipólito O, Marega Júnior E. Electric field induce delocalization in an aperiodic semiconductor heterostructure. 1997 ;[citado 2024 abr. 18 ] -
Vancouver
Bosquetti D, Basmaji P, Hipólito O, Marega Júnior E. Electric field induce delocalization in an aperiodic semiconductor heterostructure. 1997 ;[citado 2024 abr. 18 ] - Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state
- Electric field induced delocalization in an aperiodic semiconductor heterostructure
- Electronic properties of an aperiodic semiconductor heterostructure
- Resonance properties on periodic and aperiodic semiconductor heterostructure
- Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well
- Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy
- Surface kinetics effects at the mbe growth of iii-v compounds
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Projeto e construcao de um sistema de vacuo para uso em espectroscopia de massa de particulas ionizadas (sims)
- Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
