Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy (1997)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título do periódico: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27/A, n. 4, p. 154-157, 1997
-
ABNT
QUIVY, A. A. e COTTA, M A e LEITE, J. R. Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy. Brazilian Journal of Physics, v. 27/A, n. 4, p. 154-157, 1997Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/213c9cf4-b6c0-4e86-abd9-61373b880d39/1.369625.pdf. Acesso em: 23 abr. 2024. -
APA
Quivy, A. A., Cotta, M. A., & Leite, J. R. (1997). Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy. Brazilian Journal of Physics, 27/A( 4), 154-157. Recuperado de https://repositorio.usp.br/directbitstream/213c9cf4-b6c0-4e86-abd9-61373b880d39/1.369625.pdf -
NLM
Quivy AA, Cotta MA, Leite JR. Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy [Internet]. Brazilian Journal of Physics. 1997 ; 27/A( 4): 154-157.[citado 2024 abr. 23 ] Available from: https://repositorio.usp.br/directbitstream/213c9cf4-b6c0-4e86-abd9-61373b880d39/1.369625.pdf -
Vancouver
Quivy AA, Cotta MA, Leite JR. Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy [Internet]. Brazilian Journal of Physics. 1997 ; 27/A( 4): 154-157.[citado 2024 abr. 23 ] Available from: https://repositorio.usp.br/directbitstream/213c9cf4-b6c0-4e86-abd9-61373b880d39/1.369625.pdf - Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Coupled rate equation modeling of self-assembled quantum dot photoluminescence
- Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient
- Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
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