Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors (1997)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Inglês
- Source:
- Título do periódico: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27/A, n. 4, p. 215-218, 1997
-
ABNT
HENRIQUES, André Bohomoletz et al. Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors. Brazilian Journal of Physics, v. 27/A, n. 4, p. 215-218, 1997Tradução . . Acesso em: 19 abr. 2024. -
APA
Henriques, A. B., Gancalves, L. C. D., Souza, P. L., & Yavich, B. (1997). Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors. Brazilian Journal of Physics, 27/A( 4), 215-218. -
NLM
Henriques AB, Gancalves LCD, Souza PL, Yavich B. Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors. Brazilian Journal of Physics. 1997 ; 27/A( 4): 215-218.[citado 2024 abr. 19 ] -
Vancouver
Henriques AB, Gancalves LCD, Souza PL, Yavich B. Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors. Brazilian Journal of Physics. 1997 ; 27/A( 4): 215-218.[citado 2024 abr. 19 ] - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
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