Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy (1997)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 1997
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
TRENTIN, R. et al. Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 23 abr. 2024. -
APA
Trentin, R., Soares, J. A. N. de T., Sperandio, A. L., Quivy, A. A., Enderlein, R., & Leite, J. R. (1997). Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy. In Resumos. São Paulo: Sociedade Brasileira de Física. -
NLM
Trentin R, Soares JAN de T, Sperandio AL, Quivy AA, Enderlein R, Leite JR. Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy. Resumos. 1997 ;[citado 2024 abr. 23 ] -
Vancouver
Trentin R, Soares JAN de T, Sperandio AL, Quivy AA, Enderlein R, Leite JR. Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy. Resumos. 1997 ;[citado 2024 abr. 23 ] - Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Coupled rate equation modeling of self-assembled quantum dot photoluminescence
- Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient
- Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
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