Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds (1997)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 1997
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
BELOGOROKHOV, Alexander Ivanovich et al. Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 19 abr. 2024. -
APA
Belogorokhov, A. I., Karavanskii, V. A., Belogorokhova, L. I., Enderlein, R., Leite, J. R., & Tabata, A. (1997). Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds. In Resumos. São Paulo: Sociedade Brasileira de Física. -
NLM
Belogorokhov AI, Karavanskii VA, Belogorokhova LI, Enderlein R, Leite JR, Tabata A. Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds. Resumos. 1997 ;[citado 2024 abr. 19 ] -
Vancouver
Belogorokhov AI, Karavanskii VA, Belogorokhova LI, Enderlein R, Leite JR, Tabata A. Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds. Resumos. 1997 ;[citado 2024 abr. 19 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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