Optical characterization of GaAs/AlAs multiple quantum wells interfaces (1998)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: FÍSICA; FÍSICA NUCLEAR
- Language: Inglês
- Imprenta:
- Publisher: Gordon & Breach
- Publisher place: London
- Date published: 1998
- Source:
- Título do periódico: Radiation Effects & Defects in Solids
- Volume/Número/Paginação/Ano: v. 146, p. 187-197, 1998
- Conference titles: Symposium on Defect Dependent Processes in Insulators and Seminconductors
-
ABNT
LEMOS, V et al. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach. . Acesso em: 16 abr. 2024. , 1998 -
APA
Lemos, V., Sérgio, C. S., Pimenta Lima, A., Quivy, A. A., Enderlein, R., Leite, J. R., & Carvalho Junior, W. (1998). Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach. -
NLM
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2024 abr. 16 ] -
Vancouver
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2024 abr. 16 ] - Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Coupled rate equation modeling of self-assembled quantum dot photoluminescence
- Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient
- Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
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