Comparison between single and double Langmuir probe tecniques for analysis of inductively coupled plasmas (1998)
- Authors:
- USP affiliated authors: VERDONCK, PATRICK BERNARD - EP ; MACIEL, HOMERO SANTIAGO - EP ; MANSANO, RONALDO DOMINGUES - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
-
ABNT
CIRINO, Giuseppe Antonio et al. Comparison between single and double Langmuir probe tecniques for analysis of inductively coupled plasmas. . São Paulo: EPUSP. . Acesso em: 26 abr. 2024. , 1998 -
APA
Cirino, G. A., Verdonck, P. B., Maciel, H. S., Castro, R. M., Massi, M., Pisani, M. B., & Mansano, R. D. (1998). Comparison between single and double Langmuir probe tecniques for analysis of inductively coupled plasmas. São Paulo: EPUSP. -
NLM
Cirino GA, Verdonck PB, Maciel HS, Castro RM, Massi M, Pisani MB, Mansano RD. Comparison between single and double Langmuir probe tecniques for analysis of inductively coupled plasmas. 1998 ;[citado 2024 abr. 26 ] -
Vancouver
Cirino GA, Verdonck PB, Maciel HS, Castro RM, Massi M, Pisani MB, Mansano RD. Comparison between single and double Langmuir probe tecniques for analysis of inductively coupled plasmas. 1998 ;[citado 2024 abr. 26 ] - Silicon wall profiles generated by isotropic dry etching process
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