Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k (1998)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: National Academy of Sciences of Ukraine
- Publisher place: Kyiv
- Date published: 1998
- Source:
- Título do periódico: Perspectives, science and technologies for novel silicon on insulator devices
- Conference titles: Nato Advanced Research Workshop
-
ABNT
NICOLETT, Aparecido Sirley et al. Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. 1998, Anais.. Kyiv: National Academy of Sciences of Ukraine, 1998. . Acesso em: 28 mar. 2024. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1998). Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. In Perspectives, science and technologies for novel silicon on insulator devices. Kyiv: National Academy of Sciences of Ukraine. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. Perspectives, science and technologies for novel silicon on insulator devices. 1998 ;[citado 2024 mar. 28 ] -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. Perspectives, science and technologies for novel silicon on insulator devices. 1998 ;[citado 2024 mar. 28 ] - The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C
- Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C
- Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
- Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high temperatures
- A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
- The graded-channel SOI NMOSFET and its potential to analog applications
- CPU didática. (também em CD-Rom)
- Optimization of the twin gate SOI MOSFET
- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
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