A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor (1998)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/LACTRO/LAC
- Publisher place: Curitiba
- Date published: 1998
- Source:
- Título do periódico: SBMicro'ICMP 98 : Proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. 1998, Anais.. Curitiba: SBMicro/LACTRO/LAC, 1998. . Acesso em: 16 abr. 2024. -
APA
Sonnenberg, V., & Martino, J. A. (1998). A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. In SBMicro'ICMP 98 : Proceedings. Curitiba: SBMicro/LACTRO/LAC. -
NLM
Sonnenberg V, Martino JA. A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2024 abr. 16 ] -
Vancouver
Sonnenberg V, Martino JA. A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2024 abr. 16 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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