Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells (1999)
- Authors:
- Autor USP: SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- Volume/Número/Paginação/Ano: v. 60, n. 3, p. 1519-1522, 1999
-
ABNT
OLIVEIRA, J. B. B. e MENESES, E. A. e SILVA, Euzi Conceicao Fernandes da. Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells. Physical Review B, v. 60, n. 3, p. 1519-1522, 1999Tradução . . Acesso em: 23 abr. 2024. -
APA
Oliveira, J. B. B., Meneses, E. A., & Silva, E. C. F. da. (1999). Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells. Physical Review B, 60( 3), 1519-1522. -
NLM
Oliveira JBB, Meneses EA, Silva ECF da. Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells. Physical Review B. 1999 ; 60( 3): 1519-1522.[citado 2024 abr. 23 ] -
Vancouver
Oliveira JBB, Meneses EA, Silva ECF da. Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells. Physical Review B. 1999 ; 60( 3): 1519-1522.[citado 2024 abr. 23 ] - Estudo das propriedades de interfaces em poços quânticos de GaAs/GaAlAs
- Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells
- Novos resultados para excitons ligados em pocos quanticos
- Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
- Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well
- New results in photoluminescence-excitation measurements from Be single delta-doped GaAs layers
- New results on bound exciton in quantum wells
- Estudo de micro-rugosidades em pocos quanticos
- Aceitadores confinados em ilhas em interfaces de pocos quanticos de 'GA''AS' / 'GA IND.0.7''AI IND.0.3''AS'
- Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well
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