Shubnikov-de Haas oscillations in a nonplanar two-dimensional electron gas (1999)
- Authors:
- Gusev, Guennadii Michailovich
- Quivy, A. A.
- Leite, J. R.
- Bykov, A. A. - Rzhanov Institute of Semiconductor Physics
- Moshegov, N. T. - Rzhanov Institute of Semiconductor Physics
- Kudryashev, V. M. - Rzhanov Institute of Semiconductor Physics
- Toporov, A. I. - Rzhanov Institute of Semiconductor Physics
- Nastaushev, Yu V. - Rzhanov Institute of Semiconductor Physics
- USP affiliated authors: GOUSSEV, GUENNADII MICHAILOVICH - IF ; QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1088/0268-1242/14/12/318
- Assunto: ENGENHARIA MECÂNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Semiconductor Science Technology
- ISSN: 0268-1242
- Volume/Número/Paginação/Ano: v. 14, n. 12, p. 1114-1118, 1999
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
GUSEV, Guennadii Michailovich et al. Shubnikov-de Haas oscillations in a nonplanar two-dimensional electron gas. Semiconductor Science Technology, v. 14, n. 12, p. 1114-1118, 1999Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/14/12/318. Acesso em: 26 abr. 2024. -
APA
Gusev, G. M., Quivy, A. A., Leite, J. R., Bykov, A. A., Moshegov, N. T., Kudryashev, V. M., et al. (1999). Shubnikov-de Haas oscillations in a nonplanar two-dimensional electron gas. Semiconductor Science Technology, 14( 12), 1114-1118. doi:10.1088/0268-1242/14/12/318 -
NLM
Gusev GM, Quivy AA, Leite JR, Bykov AA, Moshegov NT, Kudryashev VM, Toporov AI, Nastaushev YV. Shubnikov-de Haas oscillations in a nonplanar two-dimensional electron gas [Internet]. Semiconductor Science Technology. 1999 ; 14( 12): 1114-1118.[citado 2024 abr. 26 ] Available from: https://doi.org/10.1088/0268-1242/14/12/318 -
Vancouver
Gusev GM, Quivy AA, Leite JR, Bykov AA, Moshegov NT, Kudryashev VM, Toporov AI, Nastaushev YV. Shubnikov-de Haas oscillations in a nonplanar two-dimensional electron gas [Internet]. Semiconductor Science Technology. 1999 ; 14( 12): 1114-1118.[citado 2024 abr. 26 ] Available from: https://doi.org/10.1088/0268-1242/14/12/318 - Resonant subband-Landau-level coupling in parabolic quantum wells
- High electron-mobility layers grown by molecular beam epitaxy of III-V compounds
- Spin-dependent Hall effect in a parabolic well with a quasi-three-dimensional electron gas
- Magnetotransport of a quasi-three-dimensional electron gas in the lowest Landau level
- Quantum Hall ferromagnet in a parabolic well
- Charge density wave instability in a parabolic well in perpendicular magnetic field
- Transport of the quasi-three-dimensional hole gas in a magnetic field in the ultra-quantum limit
- Transport properties of a quantum Hall ferromagnet in parabolic wells
- Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well
- Large skyrmions in parabolic AlGaAs quantum well with tunable 'g'-factor
Informações sobre o DOI: 10.1088/0268-1242/14/12/318 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 | G_M_Gusev_1999_Semicond._... | Direct link |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
