Photoelectron spectroscopic study of amoprhous GaAsN films (2000)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.126299
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2000
- Source:
- Título do periódico: Applied Physics Letters
- ISSN: 0003-6951
- Volume/Número/Paginação/Ano: v. 76, n. 16, p. 2211-2213, 2000
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ZANATTA, Antonio Ricardo e HAMMER, P. e ALVAREZ, F. Photoelectron spectroscopic study of amoprhous GaAsN films. Applied Physics Letters, v. 76, n. 16, p. 2211-2213, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.126299. Acesso em: 19 abr. 2024. -
APA
Zanatta, A. R., Hammer, P., & Alvarez, F. (2000). Photoelectron spectroscopic study of amoprhous GaAsN films. Applied Physics Letters, 76( 16), 2211-2213. doi:10.1063/1.126299 -
NLM
Zanatta AR, Hammer P, Alvarez F. Photoelectron spectroscopic study of amoprhous GaAsN films [Internet]. Applied Physics Letters. 2000 ; 76( 16): 2211-2213.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.126299 -
Vancouver
Zanatta AR, Hammer P, Alvarez F. Photoelectron spectroscopic study of amoprhous GaAsN films [Internet]. Applied Physics Letters. 2000 ; 76( 16): 2211-2213.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.126299 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
- Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films
Informações sobre o DOI: 10.1063/1.126299 (Fonte: oaDOI API)
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