Electronic properties of nitride-alloys through first principles calculations (1999)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
SCOLFARO, Luisa Maria Ribeiro et al. Electronic properties of nitride-alloys through first principles calculations. 1999, Anais.. São Paulo: SBF, 1999. . Acesso em: 19 abr. 2024. -
APA
Scolfaro, L. M. R., Marques, M., Teles, L. K., & Leite, J. R. (1999). Electronic properties of nitride-alloys through first principles calculations. In Resumos. São Paulo: SBF. -
NLM
Scolfaro LMR, Marques M, Teles LK, Leite JR. Electronic properties of nitride-alloys through first principles calculations. Resumos. 1999 ;[citado 2024 abr. 19 ] -
Vancouver
Scolfaro LMR, Marques M, Teles LK, Leite JR. Electronic properties of nitride-alloys through first principles calculations. Resumos. 1999 ;[citado 2024 abr. 19 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
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