Interference effects in nonplanar wires with a two-dimensional electron gas (1999)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; GOUSSEV, GUENNADII MICHAILOVICH - IF
- Unidades: IFSC; IF
- Subjects: MATÉRIA CONDENSADA; FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
-
ABNT
BASMAJI, Pierre et al. Interference effects in nonplanar wires with a two-dimensional electron gas. . São Paulo: IFUSP. Disponível em: http://publica-sbi.if.usp.br/PDFs/pd1370.pdf. Acesso em: 25 abr. 2024. , 1999 -
APA
Basmaji, P., Gusev, G. M., Gonzales-Borrero, P. P., Lubyshev, D. I., Silva, M. P. A. da, La Scala Junior, N., et al. (1999). Interference effects in nonplanar wires with a two-dimensional electron gas. São Paulo: IFUSP. Recuperado de http://publica-sbi.if.usp.br/PDFs/pd1370.pdf -
NLM
Basmaji P, Gusev GM, Gonzales-Borrero PP, Lubyshev DI, Silva MPA da, La Scala Junior N, Maude DK, Portal JC. Interference effects in nonplanar wires with a two-dimensional electron gas [Internet]. 1999 ;[citado 2024 abr. 25 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1370.pdf -
Vancouver
Basmaji P, Gusev GM, Gonzales-Borrero PP, Lubyshev DI, Silva MPA da, La Scala Junior N, Maude DK, Portal JC. Interference effects in nonplanar wires with a two-dimensional electron gas [Internet]. 1999 ;[citado 2024 abr. 25 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1370.pdf - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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