Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF ; BASMAJI, PIERRE - IFSC
- Unidades: IF; IFSC
- DOI: 10.1063/1.372097
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 87, n. 4, p. 1825-1831, 2000
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PUSEP, Yuri A. et al. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 19 abr. 2024. -
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097 -
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.372097 -
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.372097 - Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction
- Observation of the plateau-behavior of vertical transport in 'GA''AS' - 'GAMA' doping by raman studies
- Electrical conductivity of 'DELTA' doping superlattices parallel to the growth direction
- Raman study of fano-like electron-phonon coupling in 'DELTA'-doping 'GA''AS' superlattices
- Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells
- Estudo por espectroscopia raman da interacao eletron-fonon tipo-fano em super-redes de 'GA''AS' com dopagem-delta
- Optical properties of GaAs/AlGaAs selectively doped quantum well structures
- Raman study of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures
- Investigation of the vertical transport in 'GA''AS'-'DELTA'-doping sls by raman studies of coupled plasmon phonon modes
- Fano-like electron-phonon interference in delta-doping GaAs superlattices
Informações sobre o DOI: 10.1063/1.372097 (Fonte: oaDOI API)
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