Application of fluorine based plasma etching processes in microfluidic device fabrication (2000)
- Authors:
- USP affiliated authors: VERDONCK, PATRICK BERNARD - EP ; FURLAN, ROGERIO - EP ; MANSANO, RONALDO DOMINGUES - EP
- Unidade: EP
- Assunto: CIRCUITOS ELETRÔNICOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Solid-State Devices and Circuits
- Volume/Número/Paginação/Ano: v. 8, n. 1, p. 5-9, feb. 2000
-
ABNT
MANSANO, Ronaldo Domingues et al. Application of fluorine based plasma etching processes in microfluidic device fabrication. Journal of Solid-State Devices and Circuits, v. 8, n. 1, p. 5-9, 2000Tradução . . Acesso em: 20 abr. 2024. -
APA
Mansano, R. D., Verdonck, P. B., Simões, E. W., & Furlan, R. (2000). Application of fluorine based plasma etching processes in microfluidic device fabrication. Journal of Solid-State Devices and Circuits, 8( 1), 5-9. -
NLM
Mansano RD, Verdonck PB, Simões EW, Furlan R. Application of fluorine based plasma etching processes in microfluidic device fabrication. Journal of Solid-State Devices and Circuits. 2000 ; 8( 1): 5-9.[citado 2024 abr. 20 ] -
Vancouver
Mansano RD, Verdonck PB, Simões EW, Furlan R. Application of fluorine based plasma etching processes in microfluidic device fabrication. Journal of Solid-State Devices and Circuits. 2000 ; 8( 1): 5-9.[citado 2024 abr. 20 ] - Microfluidic amplifiers fabricated in silicon using fluorine based plasma etching processes
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- Characteristics of silicon nitride films deposited by inductively coulped plasma CVD
- High-density plasma chemical vapor deposition of amorphous carbon films
- Complex-amplitude modulation diffractive optical element performed by aperture variations on a reflective aluminium layer deposited over a variable thickness SiC2 substrate
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