Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime (2001)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: SBMicro 2001: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
GIMENEZ, Salvador Pinillos e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 23 abr. 2024. -
APA
Gimenez, S. P., Pavanello, M. A., & Martino, J. A. (2001). Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. In SBMicro 2001: proceedings. Brasília: SBMicro. -
NLM
Gimenez SP, Pavanello MA, Martino JA. Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. SBMicro 2001: proceedings. 2001 ;[citado 2024 abr. 23 ] -
Vancouver
Gimenez SP, Pavanello MA, Martino JA. Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. SBMicro 2001: proceedings. 2001 ;[citado 2024 abr. 23 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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