Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques (2001)
- Authors:
- Autor USP: MORIMOTO, NILTON ITIRO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: SBMicro 2001: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
GAUTIER, Gael et al. Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 18 abr. 2024. -
APA
Gautier, G., Crand, S., Bonnaud, O., Viana, C. E., & Morimoto, N. I. (2001). Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. In SBMicro 2001: proceedings. Brasília: SBMicro. -
NLM
Gautier G, Crand S, Bonnaud O, Viana CE, Morimoto NI. Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. SBMicro 2001: proceedings. 2001 ;[citado 2024 abr. 18 ] -
Vancouver
Gautier G, Crand S, Bonnaud O, Viana CE, Morimoto NI. Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. SBMicro 2001: proceedings. 2001 ;[citado 2024 abr. 18 ] - Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom)
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