Raman scattering studies of the vibrational properties in non intentionally doped cubic 'Al IND.X' 'Ga IND.1-X' 'N' layers (2001)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; ESPECTROSCOPIA RAMAN; DIFRAÇÃO POR RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
SILVA, Marcionilio Teles de Oliveira et al. Raman scattering studies of the vibrational properties in non intentionally doped cubic 'Al IND.X' 'Ga IND.1-X' 'N' layers. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 20 abr. 2024. -
APA
Silva, M. T. de O., Fernandez, J. R. L., Pusep, Y. A., Chitta, V. A., Tabata, A., Noriega, O. C., et al. (2001). Raman scattering studies of the vibrational properties in non intentionally doped cubic 'Al IND.X' 'Ga IND.1-X' 'N' layers. In Resumos. São Paulo: SBF. -
NLM
Silva MT de O, Fernandez JRL, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Frey T, As DJ, Lischka K. Raman scattering studies of the vibrational properties in non intentionally doped cubic 'Al IND.X' 'Ga IND.1-X' 'N' layers. Resumos. 2001 ;[citado 2024 abr. 20 ] -
Vancouver
Silva MT de O, Fernandez JRL, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Frey T, As DJ, Lischka K. Raman scattering studies of the vibrational properties in non intentionally doped cubic 'Al IND.X' 'Ga IND.1-X' 'N' layers. Resumos. 2001 ;[citado 2024 abr. 20 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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