Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys (2002)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Materials Science and Engineering B
- ISSN: 0921-5107
- Volume/Número/Paginação/Ano: v. 93, n. 1-3, pp. 2-5, 2002
-
ABNT
PAIVA, R de et al. Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys. Materials Science and Engineering B, v. 93, n. 1-3, p. p 2-5, 2002Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908. Acesso em: 19 abr. 2024. -
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Oliveira, C. de, Alves, H. W. L., Scolfaro, L. M. R., & Leite, J. R. (2002). Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys. Materials Science and Engineering B, 93( 1-3), p 2-5. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908 -
NLM
Paiva R de, Alves JLA, Nogueira RA, Oliveira C de, Alves HWL, Scolfaro LMR, Leite JR. Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): p 2-5.[citado 2024 abr. 19 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908 -
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Oliveira C de, Alves HWL, Scolfaro LMR, Leite JR. Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): p 2-5.[citado 2024 abr. 19 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908 - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
