3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures (2002)
- Authors:
- USP affiliated authors: ALVAREZ, INES PEREYRA DE - EP ; CARRENO, MARCELO NELSON PAEZ - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2002
- Source:
- Título do periódico: Microelectronics Technology and Devices SBMICRO 2002
- Conference titles: International Symposium on Microelectronics Technology and Devices
-
ABNT
PÁEZ CARREÑO, Marcelo Nelson et al. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 06 maio 2024. -
APA
Páez Carreño, M. N., Lopes, A. T., Alayo Chávez, M. I., & Pereyra, I. (2002). 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society. -
NLM
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 maio 06 ] -
Vancouver
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 maio 06 ] - Starving plasma effect on pecvd hydrogenated amorphous silicon carbide
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- Photocurrent oscillations in a-sic: h double barrier devices exhibiting negative differential resistance
- Microporos em a- 'SI ANTPOT.1-X' 'C ANTPOT.X': h do tipo diamante
- X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling
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