Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X' (2002)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
VENEZUELA, P et al. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. 2002, Anais.. São Paulo: SBF, 2002. . Acesso em: 16 abr. 2024. -
APA
Venezuela, P., Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2002). Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. In Resumos. São Paulo: SBF. -
NLM
Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Resumos. 2002 ;[citado 2024 abr. 16 ] -
Vancouver
Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Resumos. 2002 ;[citado 2024 abr. 16 ] - Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
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- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
- Ab initio study of an organic molecule interacting with a silicon-doped carbon nanotube
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