Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1016/s0022-0248(02)02313-8
- Subjects: DIFRAÇÃO POR RAIOS X; SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Crystal Growth
- ISSN: 0022-0248
- Volume/Número/Paginação/Ano: v. 251, n. 1-4, p. 101-105, 2003
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MARTINI, S et al. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, v. 251, n. 1-4, p. 101-105, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)02313-8. Acesso em: 16 abr. 2024. -
APA
Martini, S., Quivy, A. A., Lamas, T. E., Silva, M. J. da, Silva, E. C. F. da, & Leite, J. R. (2003). Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, 251( 1-4), 101-105. doi:10.1016/s0022-0248(02)02313-8 -
NLM
Martini S, Quivy AA, Lamas TE, Silva MJ da, Silva ECF da, Leite JR. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 101-105.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/s0022-0248(02)02313-8 -
Vancouver
Martini S, Quivy AA, Lamas TE, Silva MJ da, Silva ECF da, Leite JR. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 101-105.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/s0022-0248(02)02313-8 - Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
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- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
Informações sobre o DOI: 10.1016/s0022-0248(02)02313-8 (Fonte: oaDOI API)
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