Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots (2003)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1063/1.1568538
- Subjects: ESTRUTURA ELETRÔNICA; DIFRAÇÃO POR RAIOS X; ÓPTICA; FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 93, n. 10, p. 6279-6283, 2003
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: bronze
-
ABNT
DUARTE, C A et al. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1568538. Acesso em: 24 abr. 2024. -
APA
Duarte, C. A., Silva, E. C. F. da, Quivy, A. A., Silva, M. J. da, Martini, S., Leite, J. R., et al. (2003). Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, 93( 10), 6279-6283. doi:10.1063/1.1568538 -
NLM
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.1568538 -
Vancouver
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.1568538 - Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
- Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
- Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- H-band emission in single heterojunctions
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
Informações sobre o DOI: 10.1063/1.1568538 (Fonte: oaDOI API)
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