First principles materials study for spintronics: MnAs and MnN (2003)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of Abstract
- Volume/Número/Paginação/Ano: Fortaleza : DF/UFC, 2003
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
PAIVA, R de et al. First principles materials study for spintronics: MnAs and MnN. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 16 abr. 2024. -
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2003). First principles materials study for spintronics: MnAs and MnN. In Book of Abstract. Fortaleza: DF/UFC. -
NLM
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First principles materials study for spintronics: MnAs and MnN. Book of Abstract. 2003 ;[citado 2024 abr. 16 ] -
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First principles materials study for spintronics: MnAs and MnN. Book of Abstract. 2003 ;[citado 2024 abr. 16 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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