Strained-induced shifts of the zone-center phonons of III-nitrides (2003)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; PROPRIEDADES DOS MATERIAIS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of Abstract
- Volume/Número/Paginação/Ano: Fortaleza : DF/UFC, 2003
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
ALVES, H W Leite et al. Strained-induced shifts of the zone-center phonons of III-nitrides. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 19 abr. 2024. -
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2003). Strained-induced shifts of the zone-center phonons of III-nitrides. In Book of Abstract. Fortaleza: DF/UFC. -
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Strained-induced shifts of the zone-center phonons of III-nitrides. Book of Abstract. 2003 ;[citado 2024 abr. 19 ] -
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Strained-induced shifts of the zone-center phonons of III-nitrides. Book of Abstract. 2003 ;[citado 2024 abr. 19 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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