Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN (2003)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 2003
- Source:
- Título do periódico: Book of Abstracts
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
ALVES, H W Leite et al. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 20 abr. 2024. -
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2003). Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. In Book of Abstracts. Amsterdam: Elsevier Science. -
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Book of Abstracts. 2003 ;[citado 2024 abr. 20 ] -
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Book of Abstracts. 2003 ;[citado 2024 abr. 20 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
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- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
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- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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