Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors (2003)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; ESTRUTURA ELETRÔNICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
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ABNT
SILVA, Antonio Jose Roque da et al. Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors. Physica B, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVH-4B28YBV-B-J&_cdi=5535&_orig=browse&_coverDate=12%2F31%2F2003&_sk=996599999&view=c&wchp=dGLbVtb-zSkzk&_acct=C000049650&_version=1&_userid=972067&md5=8724caceca1cfb553900d7340c39a140&ie=f.pdf. Acesso em: 19 abr. 2024. -
APA
Silva, A. J. R. da, Fazzio, A., Santos, R. R. dos, & Oliveira, L. E. (2003). Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors. Physica B. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVH-4B28YBV-B-J&_cdi=5535&_orig=browse&_coverDate=12%2F31%2F2003&_sk=996599999&view=c&wchp=dGLbVtb-zSkzk&_acct=C000049650&_version=1&_userid=972067&md5=8724caceca1cfb553900d7340c39a140&ie=f.pdf -
NLM
Silva AJR da, Fazzio A, Santos RR dos, Oliveira LE. Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors [Internet]. Physica B. 2003 ;[citado 2024 abr. 19 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVH-4B28YBV-B-J&_cdi=5535&_orig=browse&_coverDate=12%2F31%2F2003&_sk=996599999&view=c&wchp=dGLbVtb-zSkzk&_acct=C000049650&_version=1&_userid=972067&md5=8724caceca1cfb553900d7340c39a140&ie=f.pdf -
Vancouver
Silva AJR da, Fazzio A, Santos RR dos, Oliveira LE. Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors [Internet]. Physica B. 2003 ;[citado 2024 abr. 19 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVH-4B28YBV-B-J&_cdi=5535&_orig=browse&_coverDate=12%2F31%2F2003&_sk=996599999&view=c&wchp=dGLbVtb-zSkzk&_acct=C000049650&_version=1&_userid=972067&md5=8724caceca1cfb553900d7340c39a140&ie=f.pdf - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
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- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
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- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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