A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation (2003)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Subjects: CRISTALOGRAFIA; FOTOLUMINESCÊNCIA; ESPECTROSCOPIA RAMAN; SILICONE
- Language: Inglês
- Imprenta:
- Publisher: Materials Research Society - MRS
- Publisher place: Warrendale
- Date published: 2003
- Source:
- Título do periódico: Materials Research Society Symposium Proceedings
- Volume/Número/Paginação/Ano: v. 777
- Conference titles: MRS Spring Meeting
-
ABNT
JACOBSOHN, L. G. et al. A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. 2003, Anais.. Warrendale: Materials Research Society - MRS, 2003. . Acesso em: 19 abr. 2024. -
APA
Jacobsohn, L. G., Zanatta, A. R., Lee, J. K., Cooke, D. W., Bennett, B. L., Wetteland, C. J., et al. (2003). A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. In Materials Research Society Symposium Proceedings (Vol. 777). Warrendale: Materials Research Society - MRS. -
NLM
Jacobsohn LG, Zanatta AR, Lee JK, Cooke DW, Bennett BL, Wetteland CJ, Tesmer JR, Nastasi M. A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. Materials Research Society Symposium Proceedings. 2003 ; 777[citado 2024 abr. 19 ] -
Vancouver
Jacobsohn LG, Zanatta AR, Lee JK, Cooke DW, Bennett BL, Wetteland CJ, Tesmer JR, Nastasi M. A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. Materials Research Society Symposium Proceedings. 2003 ; 777[citado 2024 abr. 19 ] - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
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- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
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