Microscopic behavior of quaternary (Al,Ga,In)X (X=N, P, As) alloys: the role played by the anion (2004)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
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ABNT
MARQUES, Marcelo et al. Microscopic behavior of quaternary (Al,Ga,In)X (X=N, P, As) alloys: the role played by the anion. 2004, Anais.. São Paulo: SBF, 2004. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1303-1.pdf. Acesso em: 19 abr. 2024. -
APA
Marques, M., Telles, L. K., Scolfaro, L. M. R., Leite, J. R., & Ferreira, L. G. (2004). Microscopic behavior of quaternary (Al,Ga,In)X (X=N, P, As) alloys: the role played by the anion. In Resumos. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1303-1.pdf -
NLM
Marques M, Telles LK, Scolfaro LMR, Leite JR, Ferreira LG. Microscopic behavior of quaternary (Al,Ga,In)X (X=N, P, As) alloys: the role played by the anion [Internet]. Resumos. 2004 ;[citado 2024 abr. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1303-1.pdf -
Vancouver
Marques M, Telles LK, Scolfaro LMR, Leite JR, Ferreira LG. Microscopic behavior of quaternary (Al,Ga,In)X (X=N, P, As) alloys: the role played by the anion [Internet]. Resumos. 2004 ;[citado 2024 abr. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1303-1.pdf - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
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- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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