Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures (2004)
- Authors:
- Autor USP: MORIMOTO, NILTON ITIRO - EP
- Unidade: EP
- Subjects: FILMES FINOS; ELETROQUÍMICA; MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2004
- Source:
- Título do periódico: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
ROCHA, Otávio Filipe da et al. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 19 abr. 2024. -
APA
Rocha, O. F. da, Morimoto, N. I., Viana, C. E., & Gonçalves, L. C. D. (2004). Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society. -
NLM
Rocha OF da, Morimoto NI, Viana CE, Gonçalves LCD. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 abr. 19 ] -
Vancouver
Rocha OF da, Morimoto NI, Viana CE, Gonçalves LCD. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 abr. 19 ] - Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom)
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