Computer simulations in the study of gold nanowires: the effect of impurities (2005)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- DOI: 10.1007/s00339-005-3394-y
- Subjects: MATÉRIA CONDENSADA; MATERIAIS; NANOTECNOLOGIA; ÁTOMOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Applied Physics A-materials Science & Processing
- ISSN: 0947-8396
- Volume/Número/Paginação/Ano: v. 81, n. 8, p. 1551-1558, 2005
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
FAZZIO, Adalberto e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Computer simulations in the study of gold nanowires: the effect of impurities. Applied Physics A-materials Science & Processing, v. 81, n. 8, p. 1551-1558, 2005Tradução . . Disponível em: https://doi.org/10.1007/s00339-005-3394-y. Acesso em: 23 abr. 2024. -
APA
Fazzio, A., Silva, A. J. R. da, & Fazzio, A. (2005). Computer simulations in the study of gold nanowires: the effect of impurities. Applied Physics A-materials Science & Processing, 81( 8), 1551-1558. doi:10.1007/s00339-005-3394-y -
NLM
Fazzio A, Silva AJR da, Fazzio A. Computer simulations in the study of gold nanowires: the effect of impurities [Internet]. Applied Physics A-materials Science & Processing. 2005 ; 81( 8): 1551-1558.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1007/s00339-005-3394-y -
Vancouver
Fazzio A, Silva AJR da, Fazzio A. Computer simulations in the study of gold nanowires: the effect of impurities [Internet]. Applied Physics A-materials Science & Processing. 2005 ; 81( 8): 1551-1558.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1007/s00339-005-3394-y - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
Informações sobre o DOI: 10.1007/s00339-005-3394-y (Fonte: oaDOI API)
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