Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning (2005)
- Authors:
- USP affiliated authors: MORELHAO, SERGIO LUIZ - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1016/j.mejo.2005.02.010
- Subjects: MICROELETRÔNICA; DISPOSITIVOS ELETRÔNICOS; DIFRAÇÃO POR RAIOS X; NANOTECNOLOGIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Microelectronics Journal
- ISSN: ISSN: 0026-2692
- Volume/Número/Paginação/Ano: v. 36, n. 3-6, p. 219-222, 2005
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
-
ABNT
MORELHÃO, Sérgio Luiz et al. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. Microelectronics Journal, v. 36, n. 3-6, p. 219-222, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.010. Acesso em: 26 abr. 2024. -
APA
Morelhão, S. L., Avanci, L. H., Freitas, R., & Quivy, A. A. (2005). Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. Microelectronics Journal, 36( 3-6), 219-222. doi:10.1016/j.mejo.2005.02.010 -
NLM
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 219-222.[citado 2024 abr. 26 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.010 -
Vancouver
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 219-222.[citado 2024 abr. 26 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.010 - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning
- Synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems
- Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction
- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Two-dimensional intensity profiles of effective satellites
- On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
- High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
- Enhanced X-ray phase determination by three-beam diffraction
Informações sobre o DOI: 10.1016/j.mejo.2005.02.010 (Fonte: oaDOI API)
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