Magnetotransport of a hole gas in parabolic quantum wells grown on GaAs(311)A substrates in (2005)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; GOUSSEV, GUENNADII MICHAILOVICH - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; POÇOS QUÂNTICOS; EFEITO HALL
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 2005
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
SERGIO, C S et al. Magnetotransport of a hole gas in parabolic quantum wells grown on GaAs(311)A substrates in. 2005, Anais.. São Paulo: Sociedade Brasileira de Física, 2005. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0578-1.pdf. Acesso em: 19 abr. 2024. -
APA
Sergio, C. S., Lamas, T. E., Quivy, A. A., Goussev, G. M., & Portal, J. C. (2005). Magnetotransport of a hole gas in parabolic quantum wells grown on GaAs(311)A substrates in. In Resumos. São Paulo: Sociedade Brasileira de Física. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0578-1.pdf -
NLM
Sergio CS, Lamas TE, Quivy AA, Goussev GM, Portal JC. Magnetotransport of a hole gas in parabolic quantum wells grown on GaAs(311)A substrates in [Internet]. Resumos. 2005 ;[citado 2024 abr. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0578-1.pdf -
Vancouver
Sergio CS, Lamas TE, Quivy AA, Goussev GM, Portal JC. Magnetotransport of a hole gas in parabolic quantum wells grown on GaAs(311)A substrates in [Internet]. Resumos. 2005 ;[citado 2024 abr. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0578-1.pdf - Spin valve effect and Hall resistance in a wide parabolic well
- Spin valve effect and Hall resistance in a wide parabolic well
- Variação do coeficiente Hall em poços parabalólicos largos de 'Al IND.x''Ga IND. x-1' As em função do campo magnético
- Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots
- Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well
- Magnetotransport in "Al IND.X" "Ga IND.X-1" As quantum wells with different potential shapes
- Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells
- Landau-level crossing in two-subband systems in a tilted magnetic field
- Electric field controlled g-factor in parabolic well determined by transport measurements
- High electron-mobility layers grown by molecular beam epitaxy of III-V compounds
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