A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs (1997)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 1997
- Source:
- Título do periódico: Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices
- Conference titles: Symposium Silicon-on-Insulator Technology and Devices
-
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Tradução . Pennington: The Electrochemical Society, 1997. . . Acesso em: 19 abr. 2024. -
APA
Pavanello, M. A., & Martino, J. A. (1997). A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society. -
NLM
Pavanello MA, Martino JA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In: Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society; 1997. [citado 2024 abr. 19 ] -
Vancouver
Pavanello MA, Martino JA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In: Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society; 1997. [citado 2024 abr. 19 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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