Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films (2006)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.2362877
- Subjects: ESPECTROSCOPIA RAMAN; FILMES FINOS; SILÍCIO; NÍQUEL; TEMPERATURA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 100, n. 9, p. 094311-1-094311-7, Nov. 2006
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: bronze
-
ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, v. No 2006, n. 9, p. 094311-1-094311-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2362877. Acesso em: 16 abr. 2024. -
APA
Ferri, F. A., Zanatta, A. R., & Chambouleyron, I. (2006). Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, No 2006( 9), 094311-1-094311-7. doi:10.1063/1.2362877 -
NLM
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1063/1.2362877 -
Vancouver
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1063/1.2362877 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
Informações sobre o DOI: 10.1063/1.2362877 (Fonte: oaDOI API)
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