Triple gate finFET parameter extraction using high frequency capacitance - voltage curves (2007)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2007
- Source:
- Título do periódico: SBMicro 2007
- ISSN: 1938-5862
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
RODRIGUES, Michele e SONNENBERG, Victor e MARTINO, João Antonio. Triple gate finFET parameter extraction using high frequency capacitance - voltage curves. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 18 abr. 2024. -
APA
Rodrigues, M., Sonnenberg, V., & Martino, J. A. (2007). Triple gate finFET parameter extraction using high frequency capacitance - voltage curves. In SBMicro 2007. Pennington: The Electrochemical Society. -
NLM
Rodrigues M, Sonnenberg V, Martino JA. Triple gate finFET parameter extraction using high frequency capacitance - voltage curves. SBMicro 2007. 2007 ;[citado 2024 abr. 18 ] -
Vancouver
Rodrigues M, Sonnenberg V, Martino JA. Triple gate finFET parameter extraction using high frequency capacitance - voltage curves. SBMicro 2007. 2007 ;[citado 2024 abr. 18 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
