Optical and structural characteristics of Fe-doped amorphous Si films prepared by sputtering (2009)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Subjects: MATERIAIS (PROPRIEDADES ELÉTRICAS); FERRO (ESTRUTURA;CARACTERÍSTICAS); FILMES FINOS
- Language: Inglês
- Imprenta:
- Publisher: Universidade Federal do Paraná
- Publisher place: Curitiba
- Date published: 2009
- Source:
- Título do periódico: Abstracts
- Conference titles: Brazilian Workshop on Semiconductor Physics - BWSP
-
ABNT
GALLO, Ivan Braga e ZANATTA, Antonio Ricardo. Optical and structural characteristics of Fe-doped amorphous Si films prepared by sputtering. 2009, Anais.. Curitiba: Universidade Federal do Paraná, 2009. . Acesso em: 24 abr. 2024. -
APA
Gallo, I. B., & Zanatta, A. R. (2009). Optical and structural characteristics of Fe-doped amorphous Si films prepared by sputtering. In Abstracts. Curitiba: Universidade Federal do Paraná. -
NLM
Gallo IB, Zanatta AR. Optical and structural characteristics of Fe-doped amorphous Si films prepared by sputtering. Abstracts. 2009 ;[citado 2024 abr. 24 ] -
Vancouver
Gallo IB, Zanatta AR. Optical and structural characteristics of Fe-doped amorphous Si films prepared by sputtering. Abstracts. 2009 ;[citado 2024 abr. 24 ] - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
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