Improved density of states and effective charge density in SI/PECVD Si/OxNy interface (2008)
- Authors:
- Autor USP: PEREYRA, INES - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2008
- Source:
- Título do periódico: SBMICRO 2008: Anais
- ISSN: 1938-5862
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
ALBERTIN, Katia Franklin e PEREYRA, Inés. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 14 maio 2024. -
APA
Albertin, K. F., & Pereyra, I. (2008). Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. -
NLM
Albertin KF, Pereyra I. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. SBMICRO 2008: Anais. 2008 ;[citado 2024 maio 14 ] -
Vancouver
Albertin KF, Pereyra I. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. SBMICRO 2008: Anais. 2008 ;[citado 2024 maio 14 ] - Silicon carbide clusters in silicon formed by carbon ions implantation
- One mask step a-Si:H/a-SiOxNy thin film transistor
- Photoluminescenct silicon-rich silicon oxynitride alloys grown by PECVD
- Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer
- Photoluminescence in silicon-rich PECVD silicon oxynitride alloys
- Study of MOS capacitors with annealed TiO2 gate dielectric layer
- Study of TiOxNy MOS capacitors
- High quality low temperature DPECVD silicon dioxide
- Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures
- Low temperature pecvd silicon oxide
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