Characterization of InN thin films grown by IBAD method (2010)
- Authors:
- USP affiliated authors: MANSANO, RONALDO DOMINGUES - EP ; CHUBACI, JOSE FERNANDO DINIZ - IF
- Unidades: EP; IF
- DOI: 10.1149/1.3474155
- Subjects: TRANSISTORES; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher place: New Jersey
- Date published: 2010
- Source:
- Título do periódico: Microelectronics Technology and Devices - SBMicro 2010
- ISSN: 1938-5862
- Volume/Número/Paginação/Ano: v.31, n.1, p. 165-170, 2010
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SPARVOLI, Marina e CHUBACI, José Fernando Diniz e MANSANO, Ronaldo Domingues. Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 165-170, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474155. Acesso em: 19 abr. 2024. -
APA
Sparvoli, M., Chubaci, J. F. D., & Mansano, R. D. (2010). Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 165-170. doi:10.1149/1.3474155 -
NLM
Sparvoli M, Chubaci JFD, Mansano RD. Characterization of InN thin films grown by IBAD method [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 165-170.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1149/1.3474155 -
Vancouver
Sparvoli M, Chubaci JFD, Mansano RD. Characterization of InN thin films grown by IBAD method [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 165-170.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1149/1.3474155 - Hydrogen influence on optical and electrical properties of nanostructured indium nitride (InN) films
- Study of optical and electrical properties of nanostructured indium nitride films
- Study and characterization of indium oxynitride photoconductors
- Study of optical and electrical properties of nanostructured indium nitride (InN) ¯lms
- Optical and electrical properties of sputtered 'IN''N''O' thin films
- Study of indium nitride and indium oxynitride band gaps
- Production and Characterization of TiO2 Thin Films
- Photoluminescence analysis of hydrogenated indium nitride thin films
- Hydrogen influence on the electrical properties of sputtered 'IN''N' thin films
- Emissões exoeletronicas termicamente estimuladas e termoluminescencia do 'MGO'
Informações sobre o DOI: 10.1149/1.3474155 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 | 1963892.pdf |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
