Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition (2010)
- Authors:
- USP affiliated authors: MATSUOKA, MASAO - IF ; ISOTANI, SADAO - IF ; ZAMBOM, LUIS DA SILVA - EP
- Unidades: IF; EP
- Assunto: ESPECTROSCOPIA DE RAIO X
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 2010
- Source:
- Título do periódico: Surface & Coatings Technology
- ISSN: 0257-8972
- Volume/Número/Paginação/Ano: v. 204, p.18-19, 2923-2927, 2010
- Conference titles: International Workshop on Plasma-Based Ion Implantation and Deposition
-
ABNT
MATSUOKA, Masao et al. Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition. Surface & Coatings Technology. Amsterdam: Elsevier Science. Disponível em: http://www.sciencedirect.com/science/journal/02578972. Acesso em: 29 mar. 2024. , 2010 -
APA
Matsuoka, M., Isotani, S., Mamani, W. A. S., Zambom, L. da S., & Ogata, K. (2010). Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition. Surface & Coatings Technology. Amsterdam: Elsevier Science. Recuperado de http://www.sciencedirect.com/science/journal/02578972 -
NLM
Matsuoka M, Isotani S, Mamani WAS, Zambom L da S, Ogata K. Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition [Internet]. Surface & Coatings Technology. 2010 ; 204 18-19.[citado 2024 mar. 29 ] Available from: http://www.sciencedirect.com/science/journal/02578972 -
Vancouver
Matsuoka M, Isotani S, Mamani WAS, Zambom L da S, Ogata K. Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition [Internet]. Surface & Coatings Technology. 2010 ; 204 18-19.[citado 2024 mar. 29 ] Available from: http://www.sciencedirect.com/science/journal/02578972 - X-ray photoelectron spectroscopy analysis of zirconium nitride-like filmsprepared on Si(100) substrates by ion beam assisted deposition
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