Magnetoresistance effect in N-doped carbon nanotubes (2010)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Assunto: ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumo
- Conference titles: Escola Brasileira de Estrutura Eletrônica
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ABNT
ALMEIDA, J M et al. Magnetoresistance effect in N-doped carbon nanotubes. 2010, Anais.. São Paulo: SBF, 2010. Disponível em: http://www.ebee-2010.ufabc.edu.br/programacao.html. Acesso em: 20 abr. 2024. -
APA
Almeida, J. M., Rocha, A. R., Fazzio, A., & Silva, A. J. R. da. (2010). Magnetoresistance effect in N-doped carbon nanotubes. In Resumo. São Paulo: SBF. Recuperado de http://www.ebee-2010.ufabc.edu.br/programacao.html -
NLM
Almeida JM, Rocha AR, Fazzio A, Silva AJR da. Magnetoresistance effect in N-doped carbon nanotubes [Internet]. Resumo. 2010 ;[citado 2024 abr. 20 ] Available from: http://www.ebee-2010.ufabc.edu.br/programacao.html -
Vancouver
Almeida JM, Rocha AR, Fazzio A, Silva AJR da. Magnetoresistance effect in N-doped carbon nanotubes [Internet]. Resumo. 2010 ;[citado 2024 abr. 20 ] Available from: http://www.ebee-2010.ufabc.edu.br/programacao.html - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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