Performance of electronic devices submitted to X-rays and high energy proton beams. (2011)
- Authors:
- USP affiliated authors: ADDED, NEMITALA - IF ; MEDINA, NILBERTO HEDER - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- Assunto: RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumo
- Conference titles: International Conference on Ion Beam Analysis
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ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Performance of electronic devices submitted to X-rays and high energy proton beams. 2011, Anais.. Itapema: IBA, 2011. Disponível em: http://www.if.ufrgs.br/iba2011/program/88.pdf. Acesso em: 17 abr. 2024. -
APA
Silveira, M. A. G. da, Cirne, K. H., Seixas Jr, L. E., Lima, J. A. de, Barbosa, M. D. L., Tabacniks, M. H., et al. (2011). Performance of electronic devices submitted to X-rays and high energy proton beams. In Resumo. Itapema: IBA. Recuperado de http://www.if.ufrgs.br/iba2011/program/88.pdf -
NLM
Silveira MAG da, Cirne KH, Seixas Jr LE, Lima JA de, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W, Santos RBB. Performance of electronic devices submitted to X-rays and high energy proton beams. [Internet]. Resumo. 2011 ;[citado 2024 abr. 17 ] Available from: http://www.if.ufrgs.br/iba2011/program/88.pdf -
Vancouver
Silveira MAG da, Cirne KH, Seixas Jr LE, Lima JA de, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W, Santos RBB. Performance of electronic devices submitted to X-rays and high energy proton beams. [Internet]. Resumo. 2011 ;[citado 2024 abr. 17 ] Available from: http://www.if.ufrgs.br/iba2011/program/88.pdf - Development of a system for studies on radiation effects in electronic devices
- Radiation effects for high-energy protons and x-ray in integrated circuits
- Effects of total dose of ionizing radiation on integrated circuits
- Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries.
- Comparative study of the proton beam effects between the conventional and circular gate MOSFETs.
- Performance of electronic devices submitted to X-rays and high energy proton beams
- Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs
- A round robin characterisation of the thickness and composition of thin to ultra-thin AlNO films
- Experimental setup for single event effects at the são paulo 8UD pelletron accelerator
- Measurement of a semiconductors passivation layer thickness
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