Effects of total dose of ionizing radiation on integrated circuits (2011)
- Authors:
- USP affiliated authors: MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- Assunto: RADIAÇÃO IONIZANTE
- Language: Inglês
- Imprenta:
- Publisher: SBF
- Publisher place: Foz do Iguaçu
- Date published: 2011
- Source:
- Título do periódico: Resumo
- Conference titles: Encontro de Física
-
ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Effects of total dose of ionizing radiation on integrated circuits. 2011, Anais.. Foz do Iguaçu: SBF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0340-1.pdf. Acesso em: 23 abr. 2024. -
APA
Silveira, M. A. G. da, Added, N., Barbosa, M. D. L., Medina, N. H., Tabacniks, M. H., Cirne, K. H., et al. (2011). Effects of total dose of ionizing radiation on integrated circuits. In Resumo. Foz do Iguaçu: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0340-1.pdf -
NLM
Silveira MAG da, Added N, Barbosa MDL, Medina NH, Tabacniks MH, Cirne KH, Gimenez S, Santos RBB, Lima JA de, Seixas Junior LE, Melo W. Effects of total dose of ionizing radiation on integrated circuits [Internet]. Resumo. 2011 ;[citado 2024 abr. 23 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0340-1.pdf -
Vancouver
Silveira MAG da, Added N, Barbosa MDL, Medina NH, Tabacniks MH, Cirne KH, Gimenez S, Santos RBB, Lima JA de, Seixas Junior LE, Melo W. Effects of total dose of ionizing radiation on integrated circuits [Internet]. Resumo. 2011 ;[citado 2024 abr. 23 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0340-1.pdf - Development of a system for studies on radiation effects in electronic devices
- Radiation effects for high-energy protons and x-ray in integrated circuits
- Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries.
- Performance of electronic devices submitted to X-rays and high energy proton beams.
- Comparative study of the proton beam effects between the conventional and circular gate MOSFETs.
- A round robin characterisation of the thickness and composition of thin to ultra-thin AlNO films
- Performance of electronic devices submitted to X-rays and high energy proton beams
- Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs
- Experimental setup for single event effects at the são paulo 8UD pelletron accelerator
- Measurement of a semiconductors passivation layer thickness
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