Exponential depletion of neutral dangling bonds density ('D POT. 0') by rare-earth doping inamorphous 'SI' films (2012)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1016/j.physb.2011.12.071
- Subjects: FOTÔNICA; SEMICONDUTORES; FILMES FINOS
- Language: Inglês
- Imprenta:
- Publisher: Elsevier BV
- Publisher place: Amsterdam
- Date published: 2012
- Source:
- Conference titles: Frontiers of Condensed Matter - FCM
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: hybrid
- Licença: publisher-specific-oa
-
ABNT
IWAMOTO, W. et al. Exponential depletion of neutral dangling bonds density ('D POT. 0') by rare-earth doping inamorphous 'SI' films. Physica B. Amsterdam: Elsevier BV. Disponível em: https://doi.org/10.1016/j.physb.2011.12.071. Acesso em: 19 abr. 2024. , 2012 -
APA
Iwamoto, W., Zanatta, A. R., Rettori, C., & Pagliuso, P. G. (2012). Exponential depletion of neutral dangling bonds density ('D POT. 0') by rare-earth doping inamorphous 'SI' films. Physica B. Amsterdam: Elsevier BV. doi:10.1016/j.physb.2011.12.071 -
NLM
Iwamoto W, Zanatta AR, Rettori C, Pagliuso PG. Exponential depletion of neutral dangling bonds density ('D POT. 0') by rare-earth doping inamorphous 'SI' films [Internet]. Physica B. 2012 ; 407( 16): 3222-3224.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/j.physb.2011.12.071 -
Vancouver
Iwamoto W, Zanatta AR, Rettori C, Pagliuso PG. Exponential depletion of neutral dangling bonds density ('D POT. 0') by rare-earth doping inamorphous 'SI' films [Internet]. Physica B. 2012 ; 407( 16): 3222-3224.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/j.physb.2011.12.071 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
Informações sobre o DOI: 10.1016/j.physb.2011.12.071 (Fonte: oaDOI API)
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