MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence (1989)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFQSC ; ZILIO, SÉRGIO CARLOS - IFQSC
- Unidade: IFQSC
- Assunto: FÍSICA
- Language: Português
- Imprenta:
- Publisher: UFMG
- Publisher place: Belo Horizonte
- Date published: 1989
- Source:
- Título do periódico: Anais
- Conference titles: Escola Brasileira de Física de Semicondutores
-
ABNT
BERNUSSI, A. A. et al. MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence. 1989, Anais.. Belo Horizonte: UFMG, 1989. . Acesso em: 13 maio 2024. -
APA
Bernussi, A. A., Motisuke, P., Basmaji, P., Ceschin, A. M., Siu Li, M., & Hipólito, O. (1989). MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence. In Anais. Belo Horizonte: UFMG. -
NLM
Bernussi AA, Motisuke P, Basmaji P, Ceschin AM, Siu Li M, Hipólito O. MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence. Anais. 1989 ;[citado 2024 maio 13 ] -
Vancouver
Bernussi AA, Motisuke P, Basmaji P, Ceschin AM, Siu Li M, Hipólito O. MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence. Anais. 1989 ;[citado 2024 maio 13 ] - Density of states of on-axis hydrogenic impurities in a 'GA''AS' / 'GA''AL''AS' quantum-well wire of circular cross section
- Espectro de perda de energia de eletrons de um sistema semicondutor de dupla camada
- Impurity-bound magnetopolaron in 'GA''AS' quantum well structures
- Shallow donor impurity in quantum wire in the presence of a magnetic field
- Ground- and excited-state impurity bands in silicon inversion layers
- Magnetic field effects on impurity states in quantum dots
- Surface electrons on helium film
- Numerical simulation of electronic behavior in a finite superlattice with a tamm state: a possible submillimeter wave emitter without optical pumping
- Electron correlation effects in screened hydrogenic impurity states in many-valley semiconductors
- Interacao de particulas carregadas com a superficie de um material semi-infinito
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