Performance of electronic devices submitted to X-rays and high energy proton beams (2012)
- Authors:
- USP affiliated authors: BARBOSA, MARCEL DUPRET LOPES - IF ; MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- DOI: 10.1016/j.nimb.2011.07.058
- Subjects: RAIOS X; RADIAÇÃO IONIZANTE
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Volume/Número/Paginação/Ano: v.273, p.135-138, jul.2012
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Performance of electronic devices submitted to X-rays and high energy proton beams. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, v. 273, p. 135-138, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.nimb.2011.07.058. Acesso em: 20 abr. 2024. -
APA
Silveira, M. A. G. da, Cirne, K. H., Santos, R. B. B., Gimenez, S. P., Seixas, L. E., Melo, W., et al. (2012). Performance of electronic devices submitted to X-rays and high energy proton beams. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273, 135-138. doi:10.1016/j.nimb.2011.07.058 -
NLM
Silveira MAG da, Cirne KH, Santos RBB, Gimenez SP, Seixas LE, Melo W, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Performance of electronic devices submitted to X-rays and high energy proton beams [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 135-138.[citado 2024 abr. 20 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.058 -
Vancouver
Silveira MAG da, Cirne KH, Santos RBB, Gimenez SP, Seixas LE, Melo W, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Performance of electronic devices submitted to X-rays and high energy proton beams [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 135-138.[citado 2024 abr. 20 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.058 - Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs
- Development of a system for studies on radiation effects in electronic devices
- Radiation effects for high-energy protons and x-ray in integrated circuits
- Effects of total dose of ionizing radiation on integrated circuits
- Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries.
- Performance of electronic devices submitted to X-rays and high energy proton beams.
- Comparative study of the proton beam effects between the conventional and circular gate MOSFETs.
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Informações sobre o DOI: 10.1016/j.nimb.2011.07.058 (Fonte: oaDOI API)
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