Radiation effects for high-energy protons and x-ray in integrated circuits (2012)
- Authors:
- USP affiliated authors: MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- Subjects: FÍSICA NUCLEAR; RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumo
- Conference titles: XXXV Reunião de Trabalho sobre Física Nuclear no Brasil
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ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Radiation effects for high-energy protons and x-ray in integrated circuits. 2012, Anais.. Maresias: SBF, 2012. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/rtfnb/xxxv/sys/resumos/R0041-1.pdf. Acesso em: 11 maio 2024. -
APA
Silveira, M. A. G. da, Santos, R. B. B., Medina, N. H., Added, N., Tabacniks, M. H., Lima, J. A. de, & Cirne, K. H. (2012). Radiation effects for high-energy protons and x-ray in integrated circuits. In Resumo. Maresias: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/rtfnb/xxxv/sys/resumos/R0041-1.pdf -
NLM
Silveira MAG da, Santos RBB, Medina NH, Added N, Tabacniks MH, Lima JA de, Cirne KH. Radiation effects for high-energy protons and x-ray in integrated circuits [Internet]. Resumo. 2012 ;[citado 2024 maio 11 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/rtfnb/xxxv/sys/resumos/R0041-1.pdf -
Vancouver
Silveira MAG da, Santos RBB, Medina NH, Added N, Tabacniks MH, Lima JA de, Cirne KH. Radiation effects for high-energy protons and x-ray in integrated circuits [Internet]. Resumo. 2012 ;[citado 2024 maio 11 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/rtfnb/xxxv/sys/resumos/R0041-1.pdf - Development of a system for studies on radiation effects in electronic devices
- Effects of total dose of ionizing radiation on integrated circuits
- Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries.
- Performance of electronic devices submitted to X-rays and high energy proton beams.
- Comparative study of the proton beam effects between the conventional and circular gate MOSFETs.
- Performance of electronic devices submitted to X-rays and high energy proton beams
- Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs
- A round robin characterisation of the thickness and composition of thin to ultra-thin AlNO films
- Experimental setup for single event effects at the são paulo 8UD pelletron accelerator
- Measurement of a semiconductors passivation layer thickness
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